suface mount package. s mhop microelectronics c orp. a symbol v ds v gs i dm 80 w a p d c 1.56 -55 to 150 i d units parameter 20 8 48 c/w v v 12 t a =25 c gate-source voltage drain-source voltage thermal characteristics product summary v dss i d r ds(on) (m ) max 20v 8a 20.0 @ vgs=2.5v 13.5 @ vgs=4.0v features super high dense cell design for low r ds(on) . rugged and reliable. absolute maximum ratings ( t a =25 c unless otherwise noted ) limit drain current-continuous c -pulsed a a maximum power dissipation operating junction and storage temperature range t j , t stg thermal resistance, junction-to-ambient r ja ver 1.5 www.samhop.com.tw jul,18,2014 1 details are subject to change without notice. t a =25 c t a =70 c a t a =70 c w dual n-channel enhancement mode field effect transistor STF8211 green product esd protected. g1 s1 s1 s1 t t d d f f n n 2 2 x x 3 3 g2 s2 s2 d1/d2 (bottom view) s1 g1 bottom drain contact (d1/d2) 6.4 1.00 p p i i n n 1 1 g2 s2 s2 1 2 3 4 5 6 c
symbol min typ max units bv dss 20 v 1 i gss 1 ua v gs(th) 0.5 v 10.5 g fs 35 s v sd c iss 705 pf c oss 235 pf c rss 218 pf q g 25 nc 89 nc q gs 110 nc q gd 102 t d(on) 13.4 ns t r 2 ns t d(off) 6 ns t f ns gate-drain charge v ds =10v,v gs =0v switching characteristics gate-source charge v dd =10v i d =1a v gs =4.0v r gen =6 ohm total gate charge rise time turn-off delay time fall time turn-on delay time m ohm v gs =4.0v , i d =2.0a v ds =5v,i d =4a input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transconductance diode forward voltage i dss ua gate threshold voltage v ds =v gs ,i d =250ua v ds =16v , v gs =0v v gs =8v,v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t a =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v,i d =250ua reverse transfer capacitance on characteristics v gs =2.5v , i d =2.0a 13.5 15.0 20.0 m ohm b f=1.0mhz b v ds =10v,i d =4a, v gs =4v drain-source diode characteristics and maximum ratings v gs =0v,i s =1a 0.76 1.2 v STF8211 ver 1.5 www.samhop.com.tw jul,18,2014 2 0.7 1.5 v ds =10v,i d =4a,v gs =4.0v v ds =10v,i d =4a,v gs =2.5v 10.2 nc 11.0 m ohm v gs =3.7v , i d =2.0a 14.5 12.5 m ohm v gs =3.1v , i d =2.0a 16.5 8.0 10.5 8.5 9.5 notes a.pulse test:pulse width < 10us, duty cycle < 1%. b.guaranteed by design, not subject to production testing. c.drain current limited by maximum junction temperature. d.mounted on fr4 board of 1 inch 2 ,2oz. _ _
STF8211 ver 1.5 www.samhop.com.tw jul,18,2014 3 tj( c) i d , drain current(a) v ds , drain-to-source voltage(v) figure 1. output characteristics v gs , gate-to-source voltage(v) figure 2. transfer characteristics i d , drain current(a) r ds(on) (m ) r ds(on) , on-resistance normalized i d , drain current(a) tj, junction temperature( c) figure 3. on-resistance vs. drain current figure 4. on-resistance variation with drain vth, normalized gate-source threshold voltage bvdss, normalized drain-source breakdown voltage tj, junction temperature( c) figure 5. gate threshold variation tj, junction temperature( c) figure 6. breakdown voltage variation and gate voltage current and temperature with temperature with temperature 60 48 36 24 12 0 0 0.5 1.0 1.5 2.0 2.5 3.0 v gs =2v vgs=1.5v v gs =4v vgs=2 .5v 15 12 9 6 3 0 0 0.4 2.4 2.0 1.6 1.2 0.8 tj=125 c 25 c -55 c 30 25 20 15 10 5 1 v gs =2.5v v gs =4.0v 2.0 1.8 1.6 1.4 1.2 1.0 0 0 100 75 25 50 125 150 v gs =2.5v i d =2a v gs =4.0v i d =2a 0.4 0.2 1.6 1.4 1.2 1.0 0.8 0.6 125 150 100 75 50 25 0 -25 -50 v ds =v gs i d =250ua 1.15 1.10 1.05 1.00 0.95 0.90 0.85 125 150 100 75 50 25 0 -25 -50 i d =250ua vgs=3 v 12 60 48 36 24 1
STF8211 ver 1.5 www.samhop.com.tw jul,18,2014 4 r ds(on) (m ) v gs , gate-to-source voltage(v) figure 7. on-resistance vs. is, source-drain current(a) v sd , body diode forward voltage(v) figure 8. body diode forward voltage c, capacitance(pf) v ds , drain-to-source voltage(v) figure 9. capacitance v gs , gate to source voltage(v) qg, total gate charge(nc) figure 10. gate charge switching time(ns) rg, gate resistance( ) figure 11. switching characteristics i d , drain current(a) v ds , drain-source voltage(v) figure 12. maximum safe operating area gate-source voltage variation with source current 0.1 1 10 20 10 1 0.1 0.03 v gs =4.0v single pulse t a =25 c 30 25 20 15 10 5 0 0.5 3.0 3.5 4.0 0 2.5 2.0 1.5 1.0 i d =2a 25 c 75 c 125 c 20.0 10.0 1.0 0 0.25 0.50 0.75 1.00 1.25 5.0 25 c 75 c 125 c ciss coss crss 1200 1000 800 600 400 200 0 4681012 0 2 110 100 1 10 100 300 vds=10v,id=1a vgs=4.0v td(off ) tf td(on) tr 10 8 6 4 2 0 036 9 12 15 18 21 24 v ds =10v i d =4a 100 r ds ( o n) limit 10us 10 0 u s 1 m s 1 0 ms 100ms dc
STF8211 ver 1.5 www.samhop.com.tw jul,18,2014 5 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 square wave pulse duration(sec) normalized thermal transient impedance curve single pulse p dm t 1 t 2 1. r thj a (t)=r (t) * r ja 2. r ja =s ee datasheet 3. t jm- t a =p dm *r ja (t) 4. duty cycle, d=t 1 /t 2 th th th normalized transient thermal resistance 0.2 0.5 0.05 0.1 0.02 0.01
STF8211 ver 1.5 www.samhop.com.tw jul,18,2014 6 package outline dimensions d pin #1 dot by marking top view tdfn (2x3)-6l e tdfn 6 1 l c f h e pin #1 id chamfer 0.300mm bottom view a a1 b side view symbols millimeters inches a a1 d e h l e b c f min max min max 0.700 0.800 0.000 0.050 2.950 3.050 1.950 2.050 0.350 0.450 1.450 1.550 1.650 1.750 0.195 0.211 0.200 0.300 0.500 bsc 0.028 0.031 0.000 0.002 0.116 0.120 0.077 0.081 0.014 0.018 0.057 0.061 0.065 0.069 0.008 0.0076 0.008 0.012 0.020 bsc
STF8211 www.samhop.com.tw jul,18,2014 7 ver 1.5 tdfn 2x3-6l 8211 xxxxxx wafer lot no. production date (1,2 ~ 9, a,b...) production month (1,2 ~ 9, a,b,c) production year (2009 = 9, 2010 = a...) product no. pin 1 smc internal code no.(a,b...z) top marking definition
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